2011, Vol. 28(12): 124201-124201    DOI: 10.1088/0256-307X/28/12/124201
	Peculiar Transmission Characteristics of the Large Gap Semi-Insulating GaAs Photoconductive Switch
	SHI Wei1**, MA Xiang-Rong1,2
	1Department of Applied Physics, Xi'an University of Technology, Xi'an 710048 2Institute of Physics and Electionic Enginerting, Xinjiang Normal University, Urumqi 830054
	收稿日期 2011-06-08  修回日期 1900-01-01
	Supporting info
	[1] Loubriel G M, Zutavern F J, Baca A G, Hjalmarson H P, Plut T A and Helgeson W D 1997 IEEE Trans Plas. Sci. 25 124 [2] Islam N E, Schamiloglu E and Fledderman C B 1998 Appl. Phys. Lett. 73 1988 [3] Shi W, Zhang X B, Li Q, Chen E Z and Zhao W 2002 Chin. Phys. Lett. 19 351 [4] Shi W, Jia W L, Hou L, Xu J Z and Zhang X B 2004 Chin. Phys. Lett. 21 1842 [5] Shi W, Zhao W, Liang Z X, Sun X W 2001 Chin. Phys. Lett. 18 1479 [6] Hanmin Z, Hadizad P, Jung H H and Martin A G 1993 J. Appl. Phys. 73 1807 [7] Shi W, Tian L Q 2006 Appl. Phys. Lett. 89 2002103 [8] Shi W, Wang X M, Hou L, Xu M and Liu Z 2008 Acta Phys. Sin. 57 7185 [9] Copelang J A 1966 IEEE Proc. 54 1479 [10] Copelang J A 1967 J. Appl. Phys. 38 3096 [11] Shi W 2001 Chin. J. Semiconduct. 22 1481 [12] Shi W, Tian L Q, Liu Z, Zhang L Q and Zhang Z Z 2008 Appl. Phys. Lett. 92 043511 [13] Shi W, Qu G H, Xu M, Xue H and Ji W L 2009 Appl. Phys. Lett. 94 072110