2011, Vol. 28(11): 114207-114207    DOI: 10.1088/0256-307X/28/11/114207
	An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth
	SHAO Yong-Bo1**, ZHAO Ling-Juan1, YU Hong-Yan1,2, QIU Ji-Fang1, QIU Ying-Ping1, PAN Jiao-Qing1, WANG Bao-Jun1, ZHU Hong-Liang1, WANG Wei1
	1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 2School of Space Science and Physics, Shandong University at Weihai, Weihai 264209
	收稿日期 2011-04-12  修回日期 1900-01-01
	Supporting info
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