| 2011, Vol. 28(10): 108104-108104 DOI: 10.1088/0256-307X/28/10/108104 | ||
| The Preparation and Characteristics of InxGa1−xN (0.06≤x≤0.58) Films Deposited by ECR-PEMOCVD | ||
| LIU Xing-Long1,2, QIN Fu-Wen1,2**, BIAN Ji-Ming1, ZHANG Dong1,2, CHEN Wei-Ji1,2, ZHOU Zhi-Feng1,2, ZHI An-Bo1,2, YU Bo1,2, WU Ai-Min2, JIANG Xin2,3 | ||
| 1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 2Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024 3Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Straße 9-11, D-57076 Siegen, Germany |
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| 收稿日期 2011-05-12 修回日期 1900-01-01 | ||
| Supporting info | ||
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