2011, Vol. 28(10): 107501-107501    DOI: 10.1088/0256-307X/28/10/107501
	Electric and Magnetic Field Tunable Rectification and Magnetoresistance in FexGe1−x/Ge Heterojunction Diodes
	QIN Yu-Feng1,2, YAN Shi-Shen1, KANG Shi-Shou1, XIAO Shu-Qin1, LI Qiang1, DAI Zheng-Kun1, SHEN Ting-Ting1, DAI You-Yong1**, LIU Guo-Lei1, CHEN Yan-Xue1, MEI Liang-Mo1, ZHANG Ze3
	1School of Physics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 2Department of Physics, School of Information, Shandong Agricultural University, Taian 271018 3Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027
	收稿日期 2010-12-30  修回日期 1900-01-01
	Supporting info
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