2011, Vol. 28(10): 107302-107302    DOI: 10.1088/0256-307X/28/10/107302
Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability
JI Xiao-Li1, LIAO Yi-Ming1, YAN Feng1**, SHI Yi1, ZHANG Guan2, GUO Qiang2
1Institute of Electronics Science and Engineering, Nanjing University, Nanjing 210093
2QRE/Reliability Engineering, SMIC, 18 Wenchang Road, BDA, Beijing 100176
收稿日期 2011-06-28  修回日期 1900-01-01
Supporting info
[1] Campbell J P and Lenahan P M 2002 Appl. Phys. Lett. 80 1945
[2] Ogawa S and Shiono N 1995 Phys. Rev. B 51 4218
[3] Huard V and Denais M 2006 Microelectronics Reliability 46 1
[4] Grasser T and Kaczer B 2009 IEEE Trans. Electron Device 56 1056
[5] Mitani Y, Satake H and Toriumi A 2008 IEEE Trans. Device Mater. Reliab. 8 6
[6] Mahapatra S, Maheta V D, Islam A E and Alam M A 2009 IEEE Trans. Electron. Devices 56 236
[7] Mahapatra S, Ahmed K, Varghese D, Islam A E, Gupta G, Madhav L, Saha D and Alam M A 2007 IEEE 45th Annual International Reliability Physics Symposium p 1
[8] Ang D S, Wang S and Ling C H 2005 IEEE Electron. Device Lett. 26 906
[9] Ielmini D 2009 IEEE Trans. Electron. Device 56 1943
[10] Aivars J L and Timothy R O 1994 IEEE Trans. Nucl. Sci. 41 1835
[11] Ryan J T, Lenahan P M, Grasser T and Enichlmair H 2010 Appl. Phys. Lett. 96 223509
[12] Campbell J P, Lenahan P M, Cochrane C J, Krishnan A T and Krishnan S 2007 IEEE Trans. Device Mater. Rel. 7 540
[13] Kamigaki Y, Minami S and Kato H 1990 J. Appl. Phys. 68 2211
[14] Belyi V I and Rastorguyev A 2000 Chem. Sustain. Develop. 8 13
[15] Thomas A T, Nelhiebel M, Decker S and Grasser T 2010 Appl. Phys. Lett. 96 133511