2011, Vol. 28(8): 86802-086802    DOI: 10.1088/0256-307X/28/8/086802
	Structural and Electronic Properties of Sulfur-Passivated InAs(001) ( 2×6 ) Surface
	LI Deng-Feng 1**, GUO Zhi-Cheng1, LI Bo-Lin1, DONG Hui-Ning1, XIAO Hai-Yan2
	1Department of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065 2Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054
	收稿日期 2011-03-06  修回日期 1900-01-01
	Supporting info
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