2011, Vol. 28(7): 78201-078201    DOI: 10.1088/0256-307X/28/7/078201
	Structural Analysis of In xGa1−xN/GaN MQWs by Different Experimental Methods
	DING Bin-Beng1,2, PAN Feng1,3, FENG Zhe-Chuan4, FA Tao1, CHENG Feng-Feng1, YAO Shu-De1**
	1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871 2Department of Physics and Electronic Information, Langfang Teachers College, Langfang 065000 3Department of Physics, Shaanxi University of Technology, Hanzhong 723001 4Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617
	收稿日期 2011-03-02  修回日期 1900-01-01
	Supporting info
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