2011, Vol. 28(6): 68503-068503    DOI: 10.1088/0256-307X/28/6/068503
Theoretical Explanation and Improvement to the Flare Model of Lithography Based on the Kirk Test
CHEN De-Liang, CAO Yi-Ping**, HUANG Zhen-Fen
Department of Opto-Electronics, Sichuan University, Chengdu 610065
收稿日期 2010-12-24  修回日期 1900-01-01
Supporting info
[1] Mack C A 2003 Proc. SPIE 5040 151
[2] Lai K and Progler C 2001 Proc. SPIE 4346 1424
[3] Kim Y C, Bisschop P D and Vandeberghe G 2005 J. Microlith. Microfab. Microsyst. 41 15
[4] Goodman J W 1985 Statistical Optics (New York: John Wiley & Sons) p 361
[5] Shibuya M, Ezaki H, Fukui T et al 2004 Proc. SPIE 5377 1910
[6] Progler C and Wong A 2000 Proc. SPIE 4000 40
[7] Kerkhof M V, Boeij W D, Kok H et al 2004 Proc. SPIE 5377 1960
[8] Grassman A and Moritz H 1992 J. Vac. Sci. Technol. B 10 3008
[9] Fontaine B L, Daly T P, Chapman H N et al 1996 Proc. OSA TOPS on Extreme Ultraviolet Lithography 4 203
[10] Fontaine B L, Dusa M, Acheta A et al 2002 Proc. SPIE 4691 44
[11] Kirk J P1994 Proc. SPIE 2197 566
[12] Goodman J W 1985 Statistical Optics (New York: John Wiley & Sons) p 392
[13] Stearns D G, Gaines D P and Sweeney D W 1998 Appl. Opt. 84 1003
[14] Lin Z W, Xu X, Zhang X J and Fang G Y 2011 Chin. Phys. Lett. 28 014101
[15] Li H X, Liu C X, Chen X Y, Zhang M N and Cheng C F 2011 Chin. Phys. Lett. 28 024206
[16] James W V, Jerome B, Yorick T et al 2004 Proc. SPIE 5567 700