2011, Vol. 28(6): 68502-068502    DOI: 10.1088/0256-307X/28/6/068502
	Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
	WU Meng1,2**, ZENG Yi-Ping1,2,3, WANG Jun-Xi3, HU Qiang3
	1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
	收稿日期 2011-03-17  修回日期 1900-01-01
	Supporting info
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