2011, Vol. 28(6): 67702-067702    DOI: 10.1088/0256-307X/28/6/067702
	Strain Effects of the Structural Characteristics of Ferroelectric Transition in Single-Domain Epitaxial BiFeO3 Films
	LIU Yang**, PENG Xing-Ping
	The Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000
	收稿日期 2010-09-26  修回日期 1900-01-01
	Supporting info
	[1] Wang X Y, Wang Y L and Yang R J 2009 Appl. Phys. Lett. 95 142910 [2] Wang K F, Liu J -M and Ren Z F 2009 Adv. Phys. 58(4) 321 [3] Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M and Ramesh R 2003 Science 299 1719 [4] Béa H, Dupé B, Fusil S, Mattana R, Jacquet E, Warot-Fonrose B, Wilhelm F, Rogale A, Petit S, Cros V, Anane A, Petroff F, Bouzehouane K, Geneste G, Dkhil B, Lisenkov S, Ponomareva I, Bellaiche L, Bibes M and Barthélémy A 2009 Phys. Rev. Lett. 102 217603 [5] Lebeugle D, Colson D, Forget A, Viret M, Bataille A M and Gukasov A 2008 Phys. Rev. Lett. 100 227602 [6] Catalan G and Scott J F 2009 Adv. Mater. 21 2463 [7] Roginska Y E, Tomashpo Y Y, Venevtse Y N, Petrov V M and Zhdanov G S 1966 Sov. Phys. JETP 23 47 [8] Kubel F and Schmid H 1990 Acta Crystallogr, Sect. B: Struct. Sci. 46 698 [9] Kim D H, Lee H N, Biegalski M D and Christen H M 2008 Appl. Phys. Lett. 92 012911 [10] Jang H W, Baek S H, Ortiz D, Folkman C M, Das R R, Chu Y H, Shafer P, Zhang J X, Choudhury S, Vaithyanathan V, Chen Y B, Felker D A, Biegalski M D, Rzchowski M S, Pan X Q, Schlom D G, Chen L Q, Ramesh R, Vaithyanathan V, and Eom C B 2008 Phys. Rev. Lett. 101 107602 [11] Jang H W, Baek S H, Ortiz D, Folkman C M, Eom C B, Chu Y H, Shafer P, Ramesh R, Vaithyanathan V and Schlom D G 2008 Appl. Phys. Lett. 92 062910 [12] Zeches R J, Rossell M D, Zhang J X, Hatt A J, He Q, Yang C -H, Kumar A, Wang C H, Melville A, Adamo C, Sheng G, Chu Y -H, Ihlefeld J F, Erni R, Ederer C, Gopalan V, Chen L Q, Schlom D G, Spaldin N A, Martin L W and Ramesh R 2009 Science 326 977 [13] Ma H, Chen L, Wang J, Ma J and Boey F 2008 Appl. Phys. Lett. 92 182902 [14] Zhang J X, Schlom D G, Chen L Q and Eom C B 2009 Appl. Phys. Lett. 95 122904 [15] Zhong W and Vanderbilt D 1995 Phys. Rev. Lett. 74 2587 [16] Scott J F 2010 Chem. Phys. Chem. 11 341 [17] Ban Z -G and Alpay S P 2002 J. Appl. Phys. 91 9288 [18] Alpay S P, Misirlioglu I B, Sharma A and Ban Z -G 2004 J. Appl. Phys. 95 8118 [19] Choi K J, Biegalski M, Li Y L, Sharan A, Schubert J, Uecker R, Reiche P, Chen Y B, Pan X Q, Gopalan V, Chen L -Q, Schlom D G and Eom C B 2004 Science 306 1005