2011, Vol. 28(6): 67304-067304    DOI: 10.1088/0256-307X/28/6/067304
	Effects of an InGaAs Cap Layer on the Optical Properties of InAs Quantum Dot Molecules
	TIAN Peng, HUANG Li-Rong**, YUAN Xiu-Hua, HUANG De-Xiu
	Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074
	收稿日期 2011-02-23  修回日期 1900-01-01
	Supporting info
	[1] Huffaker D L, Park G, Zou Z, Shchekin O B and Deppe D G 1998 Appl. Phys. Lett. 73 2564 [2] Akiyama T, Sugawara M and Arakawa Y 2007 Proc. IEEE 95 1757 [3] Li L H, Rossetti M, Fiore A, Occhi L and Velez C, 2005 Electron. Lett. 41 41 [4] Imamoglu A, Awschalom D D, Burkard G, DiVincenzo D P, Loss D, Sherwin M and Small A 1999 Phys. Rev. Lett. 83 4204 [5] Kiraz A, Atature M and Imamoglu A 2004 Phys Rev A 69 032325 [6] Wang L J, Rastelli A, Kiravittaya S, Benyoucef M and Schmidt O G 2009 Adv. Mater. 21 2601 [7] Beirne G J, Hermannstadter C, Wang L, Rastelli A, Schmidt O G and Michler P 2006 Phys. Rev. Lett. 96 137401 [8] Scheibner M, Yakes M, Bracker A S, Ponomarev I V, Doty M F, Hellberg C S, Whitman L J, Reinecke T L and Gammon D 2008 Nature Phys. 4 291 [9] Bayer M, Hawrylak P, Hinzer K, Fafard S, Korkusinski M, Wasilewski Z R, Stern O and Forchel A 2001 Science 291 451 [10] Songmuang R, Kiravittaya S and Schmidt O G 2003 Appl. Phys. Lett. 82 2892 [11] van Lippen T, Notzel R and Wolter J H 2005 J. Vac. Sci. Technol. B 23 1693 [12] Sablon K A, Lee J H, Wang Z M, Shultz J H and Salamo G J 2008 Appl. Phys. Lett. 92 203106 [13] Tian P, Huang L R, Yu Y and Huang D X 2010 J. Vac. Sci. Technol. B 28 1271 [14] Heyn C, Bolz A, Maltezopoulos T, Johnson R L and Hansen W 2005 J. Cryst. Growth 278 46 [15] El-Emawy A A, Birudavolu S, Wong P S, Jiang Y B, Xu H, Huang S and Huffaker D L 2003 J. Appl. Phys. 93 3529 [16] Passow T, Li S, Feinaugle P, Vallaitis T, Leuthold J, Litvinov D, Gerthsen D and Hetterich M 2007 J. Appl. Phys. 102 073511 [17] Litvinov D, Blank H, Schneider R, Gerthsen D, Vallaitis T, Leuthold J, Passow T, Grau A, Kalt H, Klingshirn C and Hetterich M 2008 J. Appl. Phys. 103 083532