2011, Vol. 28(4): 47303-047303    DOI: 10.1088/0256-307X/28/4/047303
Deflection Reduction of GaN Wafer Bowing by Coating or Cutting Grooves in the Substrates
SUN Tao1, WANG Ming-Qing1, SUN Yong-Jian2, WANG Bo-Ping3, ZHANG Guo-Yi2, TONG Yu-Zhen2, DUAN Hui-Ling1**
1 State Key Laboratory for Turbulence and Complex Systems, Center for Applied Physics and Technology (CAPT), and Department of Mechanics and Aerospace Engineering, College of Engineering, Peking University, Beijing 100871
2State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
3Department of Flight Theory, Aviation University of Air Force, Changchun 130022
收稿日期 2010-10-18  修回日期 1900-01-01
Supporting info
[1] Zhu J Y, Liu F and Stringfellow G B 2008 Phys. Rev. Lett. 101 196103
[2] Hu Q, Wei T B, Duan R F, Yang J K, Huo Z Q, Lu T C and Zeng Y P 2009 Chin. Phys. Lett. 26 096801
[3] Kuo D S, Chang S J, Shen C F, Ko T C, Ko T K and Hon S J 2010 Semicond. Sci. Technol. 25 5
[4] Bao K, Kang X N, Zhang B, Dai T, Sun Y J, Fu Q, Lian G J, Xiong G C and Zhang G Y 2009 Appl. Phys. Lett. 92 141104
[5] Sun Y J, Yu T J, Zhao H B, Shan X D, Zhang X Z, Chen Z Z, Kang X N, Yu D P and Zhang G Y 2009 J. Appl. Phys. 106 013101
[6] Pan E, Zhu R and Chung P W 2006 J. Appl. Phys. 100 013527
[7] Chen W H, Kang X N, Hu X D, Lee R, Wang Y J, Yu T J, Yang Z J and Zhang G Y 2007 Appl. Phys. Lett. 91 121114
[8] Nakamura S 1998 Science 281 956
[9] Teixeira V 2002 Vacuum 64 393
[10] Sun Y J, Gao W S, Hu T and Xing Q J 2006 Semicond. Sci. Technol. 21 575
[11] Paskova T, Darakchieva V, Valcheva E, Paskov P P, Ivanov I G, Monemar B, Bottcher T, Roder C and Hommel D 2004 J. Electron. Mater. 33 389
[12] Etzkorn E V and Clarke D R 2001 J. Appl. Phys. 89 1025
[13] Yakunin A M et al 2004 Phys. Rev. Lett. 92 216806
[14] Duan H L, Karihaloo B L, Wang J and Yi X 2006 Nanotechnology 17 3380
[15] Tavernier P R, Verghese P M and Clarke D R 1999 Appl. Phys. Lett. 74 2678
[16] Kisielowski C et al 1996 Phys. Rev. B 54 17745
[17] Ellmer K, Stock C, Diesner K and Sieber I 1997 J. Cryst. Growth 182 389
[18] Nikishkov G P 2003 J. Appl. Phys. 94 5333
[19] Anderson T L 1995 Fracture Mechanics (Florida: CRC Press) pp 52–55
[20] Sun Y J et al 2008 Semicond. Sci. Technol. 23 125022
[21] Liu C M et al 2008 J. Phys. Chem. Solids 69 572
[22] Ringwood J V, Lynn S, Bacelli G, Ma B B, Ragnoli E and McLoone S 2010 IEEE Trans. Semicond. Manufact. 23 87