2011, Vol. 28(4): 44201-044201    DOI: 10.1088/0256-307X/28/4/044201
	Temperature Compensation for Threshold Current and Slope Efficiency of 1.3µm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design
	XU Peng-Fei1, YANG Tao1**, JI Hai-Ming1, CAO Yu-Lian2, GU Yong-Xian1, WANG Zhan-Guo1
	1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
	收稿日期 2010-12-23  修回日期 1900-01-01
	Supporting info
	[1] Arakawa Y and Sakaki H 1982 Appl. Phys. Lett. 40 939 [2] Asada M, Miyamoto Y and Suematsu Y 1986 IEEE J. Quantum Electron. 22 1915 [3] Arakawa Y and Yariv A 1986 IEEE J. Quantum Electron. 22 1887 [4] Le H Q, Lin C H and Pei S S 1998 Appl. Phys. Lett. 72 3434 [5] Shchekin O B, Ahn J and Deppe D G 2002 Electron. Lett. 38 712 [6] Fathpour S, Mi Z, Bhattacharya P, Kovsh A R, Mikhrin S S, Krestnikov I L, Kohukhov A V and Ledentsov N N 2004 Appl. Phys. Lett. 85 5164 [7] Otsubo K, Hatori N, Ishida M, Okumura S, Akiyama T, Nakata Y, Ebe H, Sugawara M and Arakawa Y 2004 Jpn. J. Appl. Phys. 43 L1124 [8] Cao Y L, Yang T, Ji H M, Ma W Q, Cao Q and Chen L H 2008 IEEE Photon. Technol. Lett. 20 1860 [9] Lin C C, Wu M C and Wang W H 1999 IEE Proc. Optoelectron. 146 268 [10] Ozgur G, Demir A and Deppe D G 2009 IEEE J. Quantum Electron. 45 1265 [11] Ji H M, Yang T, Cao Y L, Ma W Q, Cao Q and Chen L H 2009 Phys. Status Solidi C 64 948 [12] Chuang S L 1995 Physics of Optoelectronic Devices (New York: John Wiley & Sons, Inc.)