| 2011, Vol. 28(3): 33601-033601 DOI: 10.1088/0256-307X/28/3/033601 | ||
| Diffusion and Interface Reaction of Cu/Si (100) Films Prepared by Cluster Beam Deposition | ||
| GAO Xing-Xin1, JIA Yan-Hui1, LI Gong-Ping1**, CHO Seong-Jin2, KIM Hee2 | ||
| 1School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 2Department of physics, Kyungsung University, Pusan 608-736, South Korea |
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| 收稿日期 2010-08-16 修回日期 1900-01-01 | ||
| Supporting info | ||
| [1] Saranin A A et al 2009 Surf. Sci. 603 2874 [2] Ferretti N, Balkaya B, Vollmer A et al 2007 J. Electron. Spectrosc. Relat. Phenom. 156–158 124 [3] De Santis M et al 2001 Surf. Sci. 477 179 [4] Stolt L et al 1991 Thin Solid Films 200 147 [5] Hong S Q et al 1991 J. Appl. Phys. 70 3655 [6] Echigoya J et al 1992 Appl. Surf. Sci. 56–58 463 [7] Sosnowski M and Yamada I 1989 Nucl. Instrum. Methods B 37/38 874 [8] Yamada I 1989 Appl. Surf. Sci. 43 23 [9] Takaoka G H, Fujita K, Ishikawa J and Takagi T 1989 Nucl. Instrum. Methods B 37/38 882 [10] Stolt L and D'Heurle F M 1990 Thin Solid Films 189 269 [11] Gao X X et al 2008 Nucl. Instrum. Methods B 266 2572 |
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