| 2011, Vol. 28(2): 27301-027301 DOI: 10.1088/0256-307X/28/2/027301 | ||
| Properties of Si Doped Al0.4Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD | ||
| YU Chen-Hui1,2, LIU Cheng1, HAN Xiang-Yun1, KANG Wei1, FANG Yan-Yan1, DAI Jiang-Nan1,2, WU Zhi-Hao1, CHEN Chang-Qing1** | ||
| 1Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 |
||
| 收稿日期 2010-11-08 修回日期 1900-01-01 | ||
| Supporting info | ||
| [1] Bayram C et al 2008 Appl. Phys. Lett. 93 211107 [2] Al Tahtamouni T M et al 2008 Appl. Phys. Lett. 92 092105 [3] Tut T, Yelboga T, Ulker E and Ozbay E 2008 Appl. Phys. Lett. 92 103502 [4] Collins C J et al 2002 Appl. Phys. Lett. 80 3754 [5] Zhou M and Zhao D G 2007 Chin. Phys. Lett. 24 1745 [6] McClintock R et al 2004 Appl. Phys. Lett. 84 1248 [7] Zhang J P et al 2002 Appl. Phys. Lett. 80 3542 [8] Banal R G, Funato M and Kawakami Y 2008 Appl. Phys. Lett. 92 241905 [9] Cantu P, Wu F et al 2003 Appl. Phys. Lett. 83 674 [10] Ren Z, Sun Q, Kwon S Y, Han J, Davitt K, Song Y K, Nurmikko A V, Cho H K, Liu W, Smart J A and Schowalter L J 2007 Appl. Phys. Lett. 91 051116 [11] Zhang J et al 2009 Chin. Phys. Lett. 26 068101 [12] Moram M A and Vickers M E 2009 Rep. Prog. Phys. 72 036502 [13] Nikishin S, Borisov B et al 2009 Appl. Phys. Lett. 95 054101 [14] Laukkanen P et al 2002 J. Appl. Phys. 92 786 [15] Iborra E et al 2006 Appl. Phys. Lett. 88 231901 [16] Artieda A, Barbieri M, Sandu C S and Muralt P 2009 J. Appl. Phys. 105 024504 [17] Park W I, Kim D H, Jung S W and Yi G C 2002 Appl. Phys. Lett. 80 4232 [18] Pusep Y A, Silva M T O, Fernandez J R L, Chitta V A, Leite J R, Frey T, As D J, Schikora D and Lischka K 2002 J. Appl. Phys. 91 6197 [19] Hushur A, Manghnani M H and Narayan J 2009 J. Appl. Phys. 106 054317 [20] Nam K B, Li J, Nakarmi M L, Lin J Y and Jiang H X 2002 Appl. Phys. Lett. 81 1038 |
||