2011, Vol. 28(1): 17302-017302    DOI: 10.1088/0256-307X/28/1/017302
Electrical Characteristics of High-Performance ZnO Field-Effect Transistors Prepared by Ultrasonic Spray Pyrolysis Technique
YI Ming-Dong1,2**, XIE Ling-Hai1, LIU Yu-Yu1, DAI Yan-Feng2, HUANG Jin-Ying2
1Key Laboratory for Organic Electronics & Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046
2State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Chinese Academy of Sciences, Changchun 130022
收稿日期 2010-10-08  修回日期 1900-01-01
Supporting info
[1] Nomura K, Ohta H, Ueda K, Kamiya T, Hirano M and Hosono H 2003 Science 300 1269
[2] Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Gonçalves A M F, Marques A J S, Pereira L M N and Martins R F P 2005 Adv. Mater. 17 590
[3] Schneider J J, Hoffmann R C, Engstler J, Soffke O R, Jaegermann W, Issanin A and Klyszcz A 2008 Adv. Mater. 20 3383
[4] Kim II-D, Lim M, Kang K T, Kim H G and Choi S Y 2006 Appl. Phys. Lett. 89 022905
[5] Cheng H C, Chen C F and Tsay C Y 2007 Appl. Phys. Lett. 90 012113
[6] Boesoen G F and Jacobs J E 1968 Proc. IEEE 56 2094
[7] Ong B S, Li C, Li Y N, Wu Y L and Loutfy R 2007 J. Am. Chem. Soc. 129 2750
[8] Meyers S T, Anderson J T, Hung C M, Thompson J, Wager J F and Keszler D A 2008 J. Am. Chem. Soc. 130 17603
[9] Zhao J L, Sun X W, Tan S R, Lo G Q, Kwong D L and Cen Z H 2007 Appl. Phys. Lett. 91 263501
[10] Sundaram K B and Khan A 1997 Thin Solid Films 295 87
[11] Ghandhi S K, Field R J and Sheal J R 1980 Appl. Phys. Lett. 37 449
[12] Natsume Y, Sakata H, Hirayama T and Yanagida H 1992 J. Appl. Phys. 72 4203
[13] Aranovich J, Ortiz A and Bube R H 1979 J. Vac. Sci. Technol. 16 994
[14] Youngjin LEE, Hagbong KIM and Yongrae ROH 2001 Jpn. J. Appl. Phys. 40 2423
[15] Bian J M, Li X M, Gao X D, Yu W D and Chen L D 2004 Appl. Phys. Lett. 84 541
[16] Du G T, Liu W F, Bian J M, Hu L Z, Liang H W, Wang X S, Liu A M and Yang T P 2006 Appl. Phys. Lett. 89 052113
[17] Wang B, Min J H, Zhao Y, Sang W B and Wang C J 2009 Appl. Phys. Lett. 94 192101
[18] Volkman S K, Mattis B A, Molesa S E, Lee J B, A de la Fuente Vombeck, Bakhishev T and Subramanian V 2004 IEEE Int. Electron Device Meeting Tech. Dig. (San Francisco 13–15 December 2004) 769