2011, Vol. 28(1): 17301-017301 DOI: 10.1088/0256-307X/28/1/017301 | ||
Negative Bias Temperature Instability | ||
CAO Yan-Rong1**, MA Xiao-Hua2, HAO Yue3, ZHU Min-Bo1, TIAN Wen-Chao1, ZHANG Yue3 | ||
1School of Electronical and Machanical Engineering, Xidian University, Xi'an 710071 2School of Technical Physics, Xidian University, Xi'an 710071 3Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071 |
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收稿日期 2010-08-03 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Zhu S, Nakajima A, Ohashi T and Miyake H 2006 IEEE Trans. Electron. Devices 53 1805 [2] Mahapatra S, Kumar P B and Alam M A 2004 IEEE Trans. Electron. Devices 51 1371 [3] Jha N K and Rao V R 2005 IEEE Electron. Device Lett. 26 687 [4] Rashkeev S N, Fleetwood D M, Schrimpf R D and Pantelides S T 2001 IEEE Trans. Nucl. Sci 48 2086 [5] Yamamoto T, Uwasawa K I and Mogami T 1999 IEEE Trans. Electron. Devices 46 921 [6] Parthasarathy C R, Denais M, Huard V, Ribes G, Vincent E and Bravaix A 2006 IEEE International Reliability Physics Symposium Proceedings (San Jose, California 26–30 March 2006) 471 [7] Schroder D K and Babcock J A 2003 J. Appl. Phys. 94 1 [8] Zhu S, Nakajima A, Ohashi T and Miyake H 2006 J. Appl. Phys. 99 064510-1 [9] Rangan S, Neal M and Everett C C Y 2003 International Electron Devices Meeting (Washington DC 8–10 December 2003) 341 |
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