2011, Vol. 28(1): 16101-016101    DOI: 10.1088/0256-307X/28/1/016101
	Analysis of Modified Williamson-Hall Plots on GaN Layers
	LIU Jian-Qi1,2,3, QIU Yong-Xin1, WANG Jian-Feng1, XU Ke1**, YANG Hui1
	1Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 2Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3Graduated University of Chinese Academy of Sciences, Beijing 100049
	收稿日期 2010-05-12  修回日期 1900-01-01
	Supporting info
	[1] Nishida T and Kobayashi N 2001 Phys. Status Solidi A 188 113 [2] Okamoto K, Tanaka T and Kubota M 2008 Appl. Phys. Express 1 072201 [3] Eastman L F and Mishra U K, 2002 IEEE Spectrum. 39 28 [4] Davis R F et al 2001 MRS Internet J. Nitride Semicond. Res. 6 1 [5] Kaganer V M, Brandt O and rampert A 2005 Phys. Rev. B 72 045423 [6] Metzger T, Höpler and orn R et al 1998 Philosophical Magazine A 77 1013 [7] Williamson G K and all W H 1953 Acta. Meter. 1 22 [8] Moram M A, Vickers M E, Kappers M J and Humphreys C J 2008 J. Appl. Phys. 103 093528 [9] Wang L J et al 2009 Chin. Phys. Lett. 26 076104 [10] Fewster P F 2000 X-ray Scattering from Semiconductors (London: Imperial College) chap 4 p 197 [11] Ayers J E 1994 J. Crystal Growth 135 71 [12] Lee S R, West A M, Allerman A A, Waldrip K E, Follstaedt D M, Provencio P P, Koleske D D and Abernathy C R 2005 Appl. Phys. Lett. 86 241904 [13] Srikant V, Speck J S and Clarke D R 1997 J. Appl. Phys. 82 4286 [14] Moram M A and Vickers M E 2009 Rep. Prog. Phys. 72 036502 [15] Harutyunyan V S et al 2004 J. Alloy. Compd. 362 287 [16] Bowen D K and Tanner B K 2001 High Resolution Diffractometry and Topography (London: Taylor & Francis) chap 3 p 60 [17] Liu J Q, Wang J F, Qiu Y X, Guo X, Huang K, Zhang Y M, Hu X J, Xu Y, Xu K, Huang X H and Yang H 2009 Semicond. Sci. Technol. 24 125007