2010, Vol. 27(12): 127801-127801    DOI: 10.1088/0256-307X/27/12/127801
Optical and Structural Properties of Cr-Doped GaN Grown by HVPE Method
YAN Huai-Yue, XIU Xiang-Qian, HUA Xue-Mei, LIU Zhan-Hui, ZHOU An, ZHANG Rong, XIE Zi-Li, HAN Ping, SHI Yi, ZHENG You-Dou
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093
收稿日期 2010-04-14  修回日期 1900-01-01
Supporting info
[1] Ohno H 1998 Science 281 951
[2] Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019
[3] Hite J K, Allums K K, Thaler G T, Abernathy C R, Pearton S J, Frazier R M, Dwivedi R, Wilkins R and Zavada J M 2008 New J. Phys. 10 055005
[4] Toth M and Phillips M R 1999 Appl. Phys. Lett. 75 3983
[5] Hashimoto M, Zhou Y K, Kanamura M, Katayama-Yoshida H and Asahi H 2003 J. Cryst. Growth 251 327
[6] Perlin P, Suski T, Teisseyre H, Leszczynski M, Grzegory I, Jun J, Porowski S, Bogusławski P, Bernholc J, Chervin J C, Polian A and Moustakas T D 1995 Phys. Rev. Lett. 75 296
[7] Ager J, Suski T, Ruvinov S, Krueger J, Conti G, Weber E, Bremser M, Davis R and Kuo C 1997 Mater. Res. Soc. Symp. Proc. 449 775
[8] Seitz R, Monteiro T, Pereira E and Di Forte-Poisson M 1999 Phys. Status Solidi A 176 661
[9] Tao Z K, Zhang R, Cui X G, Xiu X Q, Zhang G Y, Xie Z L, Gu S L, Shi Y and Zheng Y D 2008 Chin. Phys. Lett. 25 1476
[10] Hasuike N, Fukumura H, Harima H, Kisoda K, Hashimoto M, Zhou Y K and Asahi H 2004 J. Phys.: Condens. Matter 16 S5811
[11] Harima H 2004 J. Phys.: Condens. Matter 16 S5653
[12] Liu R, Bell1 A, Ponce F A, Chen C Q, Yang J W and Khan M A 2005 Appl. Phys. Lett. 86 021908
[13] Li D B, Ma B, Miyagawa R, Hu W G, Narukawa M, Miyake H and Hiramatsu K 2009 J. Cryst. Growth 311 2906
[14] Shanthi S, Hashimoto M, Zhou Y K, Kimura S, Emura S, Hasegawa S, Hasuike N, Harima H and Asahi H 2005 Appl. Phys. Lett. 86 092102
[15] Morkoç H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
[16] Zhang R and Kuech T F 1998 J. Electron. Mater. 27 L35
[17] Xu B and Pan B C 2009 J. Appl. Phys. 105 103710
[18] Yamaguchi K, Tomioka H, Yui T, Suemasu T, Ando K, Yoshizaki R and Hasegawa F 2005 Jpn. J. Appl. Phys. 44 6510
[19] Xiu X Q, Zhang R, Li B B, Xie Z L, Chen L, Liu B, Han P, Gu S L, Shi Y and Zheng Y D 2006 J. Cryst. Growth 292 212