2010, Vol. 27(12): 127304-127304    DOI: 10.1088/0256-307X/27/12/127304
	Effect of Indium Ambient on Electrical Properties of Mg-Doped AlxGa1-xN
	XU Zheng-Yu1, QIN Zhi-Xin1**, SANG Li-Wen1, ZHANG Yan-Zhao1, SHEN Bo1, ZHANG Guo-Yi1, ZHAO Lan2, ZHANG Xiang-Feng2, CHENG Cai-Jing2, SUN Wei-Guo2
	1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 2Luoyang Optoelectronic Institute, PO. Box 030, Luoyang 471009
	收稿日期 2010-04-02  修回日期 1900-01-01
	Supporting info
	[1] Nishida T, Saito H and Kobayashi N 2001 Appl. Phys. Lett. 79 711 [2] WalKer D, Zhang X, Saxler A, Kung P, Xu J and Razeghi M 1997 Appl. Phys. Lett. 70 949 [3] Nam K B, Nakarmi M L, Li J, Lin J Y and Jiang H X 2003 Appl. Phys. Lett. 83 878 [4] Nakarmi M L, Kim K H, Li J, Lin J Y and Jiang H X 2003 Appl. Phys. Lett. 82 3041 [5] Saxler A, Mitchel W C, Kung P and Razeghi M 1999 Appl. Phys. Lett. 74 2023 [6] Kozodoy P, Hansen M, DenBaars S P and Mishra U 1999 Appl. Phys. Lett. 74 3681 [7] Brandt O, Yang H, Kostial H and Ploog K H 1996 Appl. Phys. Lett. 69 2707 [8] Yamamoto T and Katayama-Yoshida H 1997 Jpn. J. Appl. Phys. Part 2 36 L180 [9] Kim K S, Yang G M and Lee H J 1999 Solid-State Electron. 43 1807 [10] Sang L W, Qin Z X, Fang H, Dai T, Yang Z J, Shen B, Zhang G Y, Zhang X P, Xu J and Yu D P 2008 Appl. Phys. Lett. 93 122104 [11] Katayama-Yoshida H, Nishimatsu T, Yamamoto T and Orita N 1998 Phys. Status Solidi B 210 429 [12] Katayama-Yoshida H, Nishimatsu T, Yamamoto T and Orita N 2001 J. Phys.: Condens. Matter 13 8901 [13] Adivarahan V, Simin G, Tamulaitis G, Srinivasan R, Yang J, Khan M A et al 2001 Appl. Phys. Lett. 79 1903 [14] Al tahtamouni T M, Sedhain A, Lin J Y and Jiang H X 2008 Appl. Phys. Lett. 92 092105