2010, Vol. 27(11): 118502-118502    DOI: 10.1088/0256-307X/27/11/118502
	InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate
	HUANG Jie1,2**, GUO Tian-Yi1, ZHANG Hai-Ying1, XU Jing-Bo1, FU Xiao-Jun1, YANG Hao1, NIU Jie-Bin1
	1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2School of Physical Science and Technology, Southwest University, Chongqing 400715
	收稿日期 2010-06-07  修回日期 1900-01-01
	Supporting info
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