2010, Vol. 27(11): 114201-114201    DOI: 10.1088/0256-307X/27/11/114201
	High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers
	WANG Yang**, QIU Ying-Ping, PAN Jiao-Qing, ZHAO Ling-Juan, ZHU Hong-Liang, WANG Wei
	Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083
	收稿日期 2010-03-10  修回日期 1900-01-01
	Supporting info
	[1] Yoshida Y, Watanabe H, Shibata K, Takemoto A and Higuchi H 1998 IEEE J. Quantum Electron. 34 1257 [2] Sugimura A 1981 IEEE J. Quantum Electron. 17 627 [3] Bhattacharya P, Singh J, Yoon H, Zhang X K, GutierrezAitken A and Lam Y L 1996 IEEE J. Quantum Electron. 32 1620 [4] Dutta N K and Nelson R J 1982 J. Appl. Phys. 53 74 [5] Haug A 1985 IEEE J. Quantum Electron. 21 716 [6] Sun H C, Davis L, Sethi S, Singh J and Bhattacharya P 1993 IEEE Photon. Technol. Lett. 5 870 [7] Mi Z, Bhattacharya P and Fathpour S 2005 Appl. Phys. Lett. 86 153109 [8] Fathpour S, Mi Z and Bhattacharya P 2005 J. Phys. D 38 2103 [9] Bhattacharya P and Mi Z 2007 Nanophotonics for Communication: Materials, Devices, and Systems IV 6779 77908 [10] Bhattacharya P, Yuan Y, Brock T, Caneau C and Bhat R 1998 IEEE Photon. Technol. Lett. 10 778