2010, Vol. 27(10): 108101-108101    DOI: 10.1088/0256-307X/27/10/108101
	Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application
	REN Kun1,2, RAO Feng1, SONG Zhi-Tang1, WU Liang-Cai1, ZHOU Xi-Lin1, XIA Meng-Jiao1, LIU Bo1, FENG Song-Lin1, XI Wei1, YAO Dong-Ning1, CHEN Bomy3
	1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Graduate School of the Chinese Academic of Sciences, Beijing 100049 3Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U.S.A.
	收稿日期 2010-06-21  修回日期 1900-01-01
	Supporting info
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