2008, Vol. 25(4): 1476-1478    DOI:
Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method
TAO Zhi-Kuo, ZHANG Rong, CUI Xu-Gao, XIU Xiang-Qian, ZHANG Guo-Yu, XIE Zi-Li, GU Shu-Lin, SHI Yi, ZHENG You-Dou
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093
收稿日期 2007-11-12  修回日期 1900-01-01
Supporting info

[1]Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000
Science 287 1019

[2] Wolos A et al 2004 Phys. Rev. B 69 115210

[3] Wolos A et al 2004 Phys. Rev. B 70 245202

[4] Gerstmann U, Blumenau A T and Overhof H 2001 Phys.
Rev. B 63 075204

[5] Graf T, Goennenwein S T B and Brandt M S 2003 Phys.
Status Solidi B 239 277

[6] Sato K and Katayama-Yoshida H 2001 Jpn. J. Appl.
Phys. II 40 L485

[7] Akinaga H, Nemeth S, De Boeck J, Nistor L, Bender H,
Borghs G, Ofuchi H and Oshima M 2000 Appl. Phys. Lett
77 4377

[8] Theodoropoulou N, Hebard A F, Chu S N G, Overberg M E,
Abernathy C R, Pearton S J, Wilson R G and Zavada J M 2001
Appl. Phys. Lett 79 3452

[9] Bonanni A, Simbrunner C, Wegscheider M, Przybylinska H,
Wolos A, Sitter H and Jantsch W 2006 Phys. Status Solidi B
243 1701

[10] Bonanni A, Kiecana M, Simbrunner C, Li T, Sawicki M,
Wegscheider M, Quast M, Przybylinska H, Navarro-Quezada A, Jakiela
R, Wolos A, Jantsch W and Dietl T 2007 Phys. Rev. B 75
125210

[11] Shon Y, Lee S, Jeon H C, Park Y S, Kim D Y, Kang T W, Kim
J S, Kima E K, Fu D J, Fan X J, Park Y J, Baik J M and Lee J L 2006
Appl. Phys. Lett. 89 082505

[12] Kane M H et al 2007 Phys. Status Solidi A 204
61

[13] Haboeck U, Siegle H, Hoffmann A and Thomsen C 1998
Phys. Status Solidi C 0 1710