| 2008, Vol. 25(5): 1803-1806 DOI: | ||
| High-Rate Growth and Nitrogen Distribution in Homoepitaxial Chemical Vapour Deposited Single-crystal Diamond | ||
| LI Hong-Dong, ZOU Guang-Tian, WANG Qi-Liang, CHENG Shao-Heng, LI Bo, Lü Jian-Nan, Lü Xian-Yi, JIN Zeng-Sun |
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| State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 | ||
| 收稿日期 2008-01-02 修回日期 1900-01-01 | ||
| Supporting info | ||
[1] Yan C S et al 2002 Proc. Nat. Acad. Sci. 99 [2] Mokuno Y et al 2006 Diamond Relat. Mater. 15 [3] Tallaire A et al 2006 Diamond Relat. Mater. [4] Achard J et al 2007 Diamond Relat. Mater. 16 [5] Okushi H et al 2002 J. Crystal Growth 237-239 [6] Charles S J et al 2004 Phys. Stat. Sol. A 11 [7] Prawer S and Nemanich R J 2004 Phil. Trans. R. Soc. [8] Yamada H et al 2007 Diamond Relat. Mater. 16 [9] Bernholc J et al 1988 Phys. Rev. Lett. 61 [10] Mainwood A 1994 Phys. Rev. B 49 7934 [11] Collins A T1978 J. Phys. C 11 L417 [12] Collins A T 1980 J. Phys. C 13 2641 [13] Samlenski R et al 1995 Appl. Phys. Lett. 67 [14] Wu X H et al 1996 Jpn. J. Appl. Phys. 35 [15] Li H D et al 2002 Jpn. J. Appl. Phys. 41 |
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