| 2008, Vol. 25(5): 1908-1911 DOI: | ||
| Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics | ||
| LIAO Zhong-Wei, HUANG Yue, ZHANG Min, SUN Qing-Qing, DING Shi-Jin, ZHANG Wei | ||
| State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 | ||
| 收稿日期 2007-12-13 修回日期 1900-01-01 | ||
| Supporting info | ||
[1] White M H, Adams D A, and Bu J 2000 IEEE Circuits Devices [2] Bu J K and White M H 2001 Solid State Electron. 45 113 [3] Cho M K and Kim D M 2000 IEEE Electron Device Lett. 21 [4] Eitan B, Pavan P, Bloom I, Aloni E, Frommer A and Finzi D 2000 [5] Choi S, Cho M, Hwang H 2003 J. Appl. Phys. 94 5409 [6] Wang X and Kwong D L 2006 IEEE Trans. Electron Devices [7] Wann H and Hu C 1995 IEEE Electron Device Lett. 16 491 [8] Tan Y N, Chim W K, Cho B J, and Choi W K 2004 IEEE Trans. [9] Lee J D, Hur S, and Choi J D 2002 IEEE Electron Device [10] Lee C H, Hur S H, Shin Y C 2005 Appl. Phys. Lett. 86 [11] Robertson J 2000 J. Vac. Sci. Technol. B 18 1785 [12] Wilk G D, Wallace R M, Anthony J M 2001 J. Appl. Phys. [13] Miyazaki S 2001 J. Vac. Technol. B 19 2212 [14] Xu M et al 2006 J. Appl. Phys. 99 07419 [15] Ding S J et al 2007 J. Electron Mater. 36 253 |
||