2008, Vol. 25(6): 2285-2288 DOI: | ||
Improvement of High Temperature Characteristics for SiGeC p-i-n Diodes with Carbon Incorporation | ||
GAO Yong, LIU Jing, YANG Yuan | ||
Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048 | ||
收稿日期 2008-02-27 修回日期 1900-01-01 | ||
Supporting info | ||
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