| 2008, Vol. 25(6): 2289-2291 DOI: | ||
| Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory | ||
| FENG Gao-Ming1,2, SONG Zhi-Tang1, LIU Bo1, FENG Song-Lin1, WAN Xu-Dong3 | ||
| 1Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 1000493Semiconductor Manufacture International Corporation (Shanghai), 18 Zhangjiang Road, Shanghai 200050 | ||
| 收稿日期 2008-03-07 修回日期 1900-01-01 | ||
| Supporting info | ||
[1] Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450 [2] Feinleib J D, Moss S C and Ovshinsky S R 1971 Appl. Phys. [3] Alexander V K, Paul F and Anatoly I F 2004 Nature Mater. [4] Ohta T, Nishiuchi K and Narumi K 2000 Jpn. J. Appl. Phys. [5] Fai Y, AHN S J and HWANG Y N 2005 Jpn. J. Appl. Phys. [6] Lacaita A L 2006 Solid State Electron. 50 24 [7] Muneyuki N, Manabu I and Yoshihiko H 2005 J. Appl. Phys. [8] Alexander V K, Paul F and Anatoly I F 2004 Nature Mater. [9] Liu B, Feng G M and Wu L C 2007 Chin. Phys. Lett. 24 |
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