| 2008, Vol. 25(11): 4097-4100 DOI: | ||
| Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia | ||
| LIN Guo-Qiang, ZENG Yi-Ping, WANG Xiao-Liang, LIU Hong-Xin | ||
| Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 | ||
| 收稿日期 2008-04-15 修回日期 1900-01-01 | ||
| Supporting info | ||
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