2008, Vol. 25(11): 4143-4146 DOI: | ||
Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells | ||
ZHAO De-Gang1, JIANG De-Sheng1, ZHU Jian-Jun1, LIU Zong-Shun1, ZHANG Shu-Ming1, WANG Yu-Tian1, YANG Hui 1,2 | ||
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 | ||
收稿日期 2008-07-30 修回日期 1900-01-01 | ||
Supporting info | ||
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