2008, Vol. 25(11): 4174-4176    DOI:
High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100nm
LV Shi-Long1,2, SONG Zhi-Tang1, ZHANG Ting1, FENG Song-Lin1
1Nanotechnology Laboratory, Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049
收稿日期 2008-08-31  修回日期 1900-01-01
Supporting info

[1] Lai S and Lowrey T 2001 IEEE Int. Electron Devices
Meeting (Washington, DC, 2--5 December 2001) p 803

[2] Pirovano A, Lacaita A L, Benvenuti A, Pellizzer F, Hudgens
S and Bez R 2003 Tech. Dig. Int. Electron Devices Meeting
(Washington, DC, 8--10 December 2003) p 699

[3] Lai S 2003 IEEE Int. Electron Devices Meeting
(Washington, DC, 8--10 December 2003) p 255

[4] Pellizzer F, Benvenuti A, Gleixner B, Kim Y, Johnson B,
Magistretti M, Marangon T, Pirovano A, Bez R and Atwood G 2006
Symp. VLSI p122

[5] Cho S L,~Yi J H, Ha Y H, Kuh B J, Lee C M, Park J H, Nam S
D,~Horii H,~Cho B K, Ryoo K C, Park S O, Kim H S, Chung U I,~Moon J
T and Ryu B I 2005 Symp. VLSI Tech. p 96

[6] Lankhorst M H R, Ketelaars W S M M and Wolters R A M 2005
Nature Mater. 4 347

[7] Chen Y C et al 2006 IEDM Tech. Dig. (San Francisco,
CA, 10--13 December 2006) p 777

[8] Jedema F J, van der Wagt J, in t Zandt M A A, Wolters R A
M, Ketelaars B W S M M, Delhougne R, Tio Castro D, Gravesteijn D J
and Attenborough K 2007 Proceedings of the ICMTD (unpublished)
p51

[9] Kang D H, Ahn D H, Kim K B, Webb J F and Yi K W 2003
J. Appl. Phys. 94 3536

[10] Nakayama K, Kojima K, Imai Y, Kasai T, Fukushima S,
Kitagawa A, Kumeda M, Kakimoto Y and Suzuki M 2003 Jpn. J.
Appl. Phys. 42 404

[11] Liu B, Zhang T, Xia J L, Song Z T, Feng S L and Chen B
2004 Semicond. Sci. Technol. 19 L61

[12] Yoon S M, Lee N Y, Ryu S O, Choi K J, Park Y S, Lee S Y,
Yu B G, Kang M J, Choi S Y and Wuttig M 2006 IEEE Electron
Device Lett. 27 445

[13] Zhang T, Song Z T, Wang F, Liu B, and Feng S L 2007
Appl. Phys. Lett. 91 222102

[14] Aktary M, Jensen M O, Westra K L, Brett M J, Freeman M R
2003 J. Vac. Sci. Technol. B 21 L5

[15] P\'epin A, Studer V, Decanini D and Chen Y 2004
Microelectron. Engin. 73 233

[16] Bilenberg B, Sch{\oler M, Shi P, Schmidt M S, B{\ogild
P, Fink M, Schuster C, Reuther F, Gruetzner C and Kristensen A 2006
J. Vac. Sci. Technol. B 24 1776

[17] Lee S H, Hwang Y N, Lee S Y, Ryoo K C, Ahn S J, Koo H C,
Jeong C W, Kim Y T, Koh G H, Jeong G T, Jeong H S and Kim K 2004
Proc. Symp. VLSI Tech. Dig. p 20

[18] Hwang Y N, Hong J S, Lee S H et al 2003 Proc. Symp.
VLSI Tech. Dig. p 173