2008, Vol. 25(11): 4174-4176 DOI: | ||
High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100nm | ||
LV Shi-Long1,2, SONG Zhi-Tang1, ZHANG Ting1, FENG Song-Lin1 | ||
1Nanotechnology Laboratory, Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049 | ||
收稿日期 2008-08-31 修回日期 1900-01-01 | ||
Supporting info | ||
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