2008, Vol. 25(12): 4360-4363    DOI:
Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy
WU Rong, LIN Jian-Hui, ZHANG Sheng-Li, YANG Hong-Bin, JIANG Zui-Min, YANG Xin-Ju
Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433
收稿日期 2008-07-11  修回日期 1900-01-01
Supporting info

[1] Medeiros-Ribeiro G, Bratkovski A M, Kamins T I, Ohlberg D
A A and Williams R S 1998 Science 279 353

[2] Brunner K 2002 Rep. Prog. Phys. 65 27

[3] Zhang S K, Zhu H J, Lu F, Jiang Z M and Wang X 1998
Phys. Rev. Lett. 80 3340

[4] Zhang S K, Lu F, Jiang Z M and Wang X 2000 Solid.
Films 369 65

[5] Stomp R, Miyahara Y, Schaer S, Sun Q F, Guo G, Grutter P,
Studenikin S, Poole P and Sachrajda A 2005 Phys. Rev. Lett.
94 056802

[6] Geller M, Marent A, Stock E, Bimberg D, Zubkov V I,
Shugunova I S and Solomonov A V 2006 Appl. Phys. Lett.
89 232105

[7] Liao W M, Li P W, David M. Kuo T and Lai W T 2006
Appl. Phys. Lett. 88 182109

[8] Xue F, Qin J, Cui J, Fan Y L, Jiang Z M and Yang X J 2005
Surf. Sci. 592 65

[9] Chung H C, Chu W H and Liu C P 2006 Appl. Phys.
Lett. 89 082105

[10] Tanaka I, Kamiya I, Sakaki H, Qureshi N, Allen S J and
Petroff P M 1999 Appl. Phys. Lett. 74 844

[11] J. Spradlin, S. Dogan, J. Xie, A. A. Baski, and H.
Morkoc, 2004 Appl. Phys. Lett. 84 4150

[12] Pan N, Wang X P, Zhang K, Hu H L, Xu B, Li F Q and Hou J
G 2005 Nanotechnology 16 1069

[13] Wu Y Q, Zou J, Li F H, Cui J, Lin J H, Wu R and Jiang Z M
2007 Nanotechnology 18 025404

[14] Wu R, Li F H, Jiang Z M and Yang X J 2006
Nanotechnology 17 5111

[15]Wu L C, Chen K J,Wang J M, Huang X F, Song Z T and Liu W L
2006 Appl. Phys. Lett. 89 112118

[16]Huang S Y and Oda S 2005 Appl. Phys. Lett. 87
173107