2008, Vol. 25(12): 4360-4363 DOI: | ||
Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy | ||
WU Rong, LIN Jian-Hui, ZHANG Sheng-Li, YANG Hong-Bin, JIANG Zui-Min, YANG Xin-Ju | ||
Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433 | ||
收稿日期 2008-07-11 修回日期 1900-01-01 | ||
Supporting info | ||
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