| 2008, Vol. 25(12): 4466-4468 DOI: | ||
| Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs1-ySby Grown on GaAs by Molecular Beam Epitaxy | ||
| GAO Han-Chao, WANG Wen-Xin, JIANG Zhong-Wei, LIU Jian, YANG Cheng-Liang, WU Dian-Zhong, ZHOU Jun-Ming, CHEN Hong | ||
| Beijing National Laboratory for Condensed Matter Physics, Institute of physics, Chinese Academy of Sciences, Beijing 100190 | ||
| 收稿日期 2008-04-11 修回日期 1900-01-01 | ||
| Supporting info | ||
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