2009, Vol. 26(1): 14214-014214 DOI: 10.1088/0256-307X/26/1/014214 | ||
Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy | ||
WANG Hai-Li1, WU Dong-Hai1, WU Bing-peng1, NI Hqiao-Qiao1, HUANG She-Song1, XIONG Yong-Hua1, WANG Peng-Fei1, HAN Qin1, NIU Zhi-Chuan1, I. Tångring2, S. M. Wang2 |
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1State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100082Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden | ||
收稿日期 2008-04-19 修回日期 1900-01-01 | ||
Supporting info | ||
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