2009, Vol. 26(3): 36402-036402    DOI: 10.1088/0256-307X/26/3/036402
Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2
HAN Yue-Ping, HAN Yan
National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051
收稿日期 2008-11-11  修回日期 1900-01-01
Supporting info

[1] Choi S, Jeon S, Cho M, and Hwang H 2003 Jpn. J. Appl.
Phys. 42 L102

[2] Martin N, Banakh O, Santo A M E, Springer S, Sanjines R,
Takadoum J and Levy F 2001 Appl. Surface Sci. 185 123

[3] Lim J W and Yun S J 2004 Electrochem. Solid-State
Lett. 7 H33

[5] Lide D R and Frederiks H P R 1997 CRC Handbook of
Chemistry and Physics 78$^{th$ edn (Boca Raton, FL: CRC Press)

[4] Kang D H, Ahn D H, Kwon M H, Kwon H S and Kim K B 2004
Jpn. J. Appl. Phys. 43 5243

[6] Sumi H, Inoue H, Taguchi M, Sugano Y, Masuya H, Ito N,
Kishida S and Tokutaka H 1997 Jpn. J. Appl. Phys. 36 595

[7] Wittmer M, Noser J and Melchior H 1981 J. Appl.
Phys. 52 6659