2009, Vol. 26(3): 36402-036402 DOI: 10.1088/0256-307X/26/3/036402 | ||
Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2 | ||
HAN Yue-Ping, HAN Yan | ||
National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051 | ||
收稿日期 2008-11-11 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Choi S, Jeon S, Cho M, and Hwang H 2003 Jpn. J. Appl. [2] Martin N, Banakh O, Santo A M E, Springer S, Sanjines R, [3] Lim J W and Yun S J 2004 Electrochem. Solid-State [5] Lide D R and Frederiks H P R 1997 CRC Handbook of [4] Kang D H, Ahn D H, Kwon M H, Kwon H S and Kim K B 2004 [6] Sumi H, Inoue H, Taguchi M, Sugano Y, Masuya H, Ito N, [7] Wittmer M, Noser J and Melchior H 1981 J. Appl. |
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