2009, Vol. 26(3): 37306-037306 DOI: 10.1088/0256-307X/26/3/037306 | ||
Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface | ||
GENG Li1, MAGYARI-KOPE Blanka2, ZHANG Zhi-Yong3, NISHI Yoshio2 | ||
1Department of Microelectronics, Xi'an Jiaotong University, Xi'an 7100492Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA3Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA | ||
收稿日期 2008-10-13 修回日期 1900-01-01 | ||
Supporting info | ||
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