| 2009, Vol. 26(5): 53101-053101 DOI: 10.1088/0256-307X/26/5/053101 | ||
| Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2×1 | ||
| SHI Yu, SUN Qing-Qing, DONG Lin, LIU Han, DING Shi-Jin, ZHANG Wei | ||
| State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 | ||
| 收稿日期 2008-11-11 修回日期 1900-01-01 | ||
| Supporting info | ||
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