2009, Vol. 26(7): 78501-078501 DOI: 10.1088/0256-307X/26/7/078501 | ||
Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric | ||
YU Ai-Fang, QI Qiong, JIANG Peng, JIANG Chao | ||
National Center for Nanoscience and Nanotechnology, No. 11, Beiyitiao Zhongguancun, Beijing 100190 | ||
收稿日期 2009-01-05 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Cavallini M, Stoliar P, Moulin J, Surin M, Leclere P, [2] Dimitrakopoulos C D, Kymissis I, Purushothaman S, Neumayer [3] Jeong Y T and Dodabalapur A 2007 Appl. Phys. Lett. [4] Wang J, Yan X J, Yu Y X, Zhang J and Yan D H 2004 [5] Kim C S, Jo S J, Lee S W, Kim W J, Baik H K and Lee S J [6] Zhao Y H, Dong G F, Wang L D and Qiu Y 2007 Chin. [7] Kelley T W, Muyres D V, Baude P F, Smith T P and Jones T D [8] Horowitz G and Hajlaoui M E 2000 Adv. Mater. [9] Verlaak S, Rolin C and Heremans P 2007 J. Phys. [10] Verlaak S and Heremans P 2007 Phys. Rev. B 75 [11] Ruiz R, Papadimitratos A, Alex C and Malliaras G G 2005 [12]Gulla A F, Saha M S, Allen R J and Mukerjee S 2006 J. [13] Katz H E 2004 Chem. Mater. 16 4748 [14] Fritz S E, Kelley T W and Frisbie C D 2005 J. Phys. [15] Soeren S, Vusser S D, Jonge S D, Janssen D, Verlaak S, [16] Yang S Y, Shin K and Park C E 2005 Adv. Mater. [17] Smith D L 1995 Thin-Film Deposition: Principles and [18] Deman A L, Erouel M, Lallemand D, Phaner-Goutorbe M, Lang |
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