2009, Vol. 26(8): 87301-087301    DOI: 10.1088/0256-307X/26/8/087301
Bias Voltage Controlled Positive Magnetoresistance of Fe0.05-C0.95/Si Heterostructures
WU Li-Hua1,2, ZHANG Xiao-Zhong1,2, ZHANG Xin1,2, WAN Cai-Hua1,2, GAO Xi-Li1,2, TAN Xin-Yu1,2, YUAN Jun3
1Key Laboratory of Advanced Materials of Education Ministry, Department of Materials Science and Engineering, Tsinghua University, Beijing 1000842National Center for Electron Microscopy (Beijing), Beijing 1000843Department of Physics, University of York, Heslington, York YO10 5DD, UK
收稿日期 2009-04-09  修回日期 1900-01-01
Supporting info

[1] Solin S A, Thio T, Hines D R and Heremans J J 2000
Science 289 1530

[2] Issi J P, Mangez J H and Heremans J 1976 Phys. Rev.
B 14 4381

[3] Forrest R D, Burden A P, Silva S R P, Cheah L K and Shi X
1998 App. Phys. Lett. 73 3784

[4] Inoue T, Ogletree D F and Salmeron M 2000 Appl. Phys.
Lett. 76 2961

[5] Hastas N A, Dimitriadis C A, Tassis D H and Logothetidis S
2001 App. Phys. Lett. 79 638

[6] Konofaos N, Angelis C T, Evangelou E K, Dimitriadis C A
and Logothetidis S 2001 App. Phys. Lett. 79 2381

[7] Trakhtenberg I.Sh, Vladimirov A B, Rubstein A P, Kuzminaa
E V, Uemurab K, Gontarc A G and Dub S N 2003 Diamond Relat.
Mater. 12 1788

[8] Corbella C, Oncins G, Gomez M A, Polo M C, Pascual E,
Garcia-Cespedes J, Andujar J L and Bertran E 2005 Diamond
Relat. Mater. 14 1103

[9] Valentini L, Cantalini C, Lozzi L, Picozzi S, Armentano I,
Kenny J M and Santucci S 2004 Sensors Actuators B 100
33

[10] Gao X L, Xue Q Z, Hao L Z, Li Q, Zheng Q B and Tian P
$2007$ App. Phys. Lett. 91 092014

[11] Schoonus J J H M, Bloom F L, Wagemans W, Swagten H J M
and Koopmans B 2008 Phys. Rev. Lett. 100 127202

[12] Schoonus J J H M, Kohlhepp J T, Swagten H J M and
Koopmans B 2008 J. Appl. Phys. 103 07F309

[13] Bhattacharyya S, Henley S J, Lock D, Blanchard N P and
Silvand S R P 2006 Appl. Phys. Lett. 89 022113

[14] Hao L Z, Xue Q Z, Gao X L, Li Q, Zheng Q B and Yan K Y
2007 J. Appl. Phys. 101 053718J

[15] Tian P and Zhang X 2007 Carbon 45 1764

[16] Zhu D D and Zhang X 2004 J. Appl. Phys. 95
1906

[17] Xue Q Z and Zhang X 2005 Carbon 43 760

[18] Xue Q Z and Zhang X 2005 Mater. Sci. Forum
475 2207

[19] Zhang X, Xue Q Z and Tian P 2004 Patent No.
CN1487115-A, CN1267575-C

[20] Sladek R J 1958 J. Phys. Chem. Solids 5 157

[21] Hickmott T W 1992 Phys. Rev. B 46 12342

[22] Xue Q Z, Zhang X, Tian P, Jin C 2004 App. Phys.
Lett. 85 4397

[23] Street R A, Zesch J and Thompson M 1983 J. Appl.
Phys. Lett. 43 672

[24] Robertson J 2001 Phys. Status Solidi A 186
177

[25] Street R A 1978 Phys. Rev. B 17 3984

[26] Shklovskii B I, Fritzsche H and Baranovskii S D 1989
Phys. Rev. Lett. 62 2989

[27] Michael P D, Shinpei Y, Shinya K, Teruo O and Kensuke K
2009 Nature 457 1112