[1] Trumbore F A 1960 Bell Syst. Tech. J. 39 205

[2] Chui C and Saraswat K C 2004 International Conference on Integrated Circuit Design and Techno (Austin, Texas 17--20 May 2004) p 245

[3] Lepselter M P and Sze S M 1968 Proc. IEEE 56
1400

[4] Kedzierski J, Xuan P, Anderson E H, Bokor J, King T J and
Hu C 2000 IEDM Tech. Dig. (San Francisco, CA 11--13 December 2000) p 57

[5] Guo J and Lundstrom M S 2002 IEEE Trans. Electron.
Devices 49 1897

[6] Geng L, Magyari-Kope B, Zhang Z Y and Nishi Y 2009
Chin. Phys. Lett. 26 037306

[7] Yue S.L., Lu Q, Shi CY, Yang H X, Wang Q, Xu P and Gu C Z
2006 Chin. Phys. Lett. 23 678

[8] Jang M, Kim Y, Shin J, Lee S and Park K 2004 Appl.
Phys. Lett. 84 741

[9] Snyder J P, Helms C R and Nishi Y 1995 Appl. Phys.
Lett. 67 1420

[10] Connelly D, Faulkner C, Grupp D E and Harris J S 2004
IEEE Trans. Nanotechnol. 3 98

[11] Tao M, Udeshi D, Basit N, Maldonado E and Kirk W P 2003
Appl. Phys. Lett. 82 1559

[12] Zhao Q T, Breuer U, Rije E, Lenk S and Mantl S 2005
Appl. Phys. Lett. 86 062108

[13] Kinoshita A, Tsuchiya Y, Yagishita A, Uchida K and Koga J
2004 VLSI Symp. Tech. Dig. (Honolulu 15--17 June 2004) p 168

[14] Wong A S, Chi D Z, Loomans M, Ma D, Lai M Y, Tjiu W C,
Chua S T, Lim C W and Greene J E 2002 Appl. Phys. Lett.
81 5138

[15] Cheung S K and Cheung NW 1986 Appl. Phys. Lett.
49 85

[16] JCPDS diffraction file 07-0297 (NiGe)

[17] Jin L J, Pey K L, Choi W K, Fitzgerald E A, Antoniadis D
A, Pitera A J, Lee M L, Chi D Z and Tung C H 2004 Thin Solid
Films 462--463 151