2009, Vol. 26(9): 96801-096801 DOI: 10.1088/0256-307X/26/9/096801 | ||
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE | ||
HU Qiang1, WEI Tong-Bo2, DUAN Rui-Fei2, YANG Jian-Kun2, HUO Zi-Qiang2, LU Tie-Cheng1, ZENG Yi-Ping2 | ||
1Department of Physics and Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 6100642Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 | ||
收稿日期 2009-03-18 修回日期 1900-01-01 | ||
Supporting info | ||
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