2009, Vol. 26(9): 96801-096801    DOI: 10.1088/0256-307X/26/9/096801
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
HU Qiang1, WEI Tong-Bo2, DUAN Rui-Fei2, YANG Jian-Kun2, HUO Zi-Qiang2, LU Tie-Cheng1, ZENG Yi-Ping2
1Department of Physics and Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 6100642Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
收稿日期 2009-03-18  修回日期 1900-01-01
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