2009, Vol. 26(11): 116102-116102 DOI: 10.1088/0256-307X/26/11/116102 | ||
Structural and Electrical Properties of Single Crystalline a-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy | ||
LU Zhong-Lin1,2,3, ZOU Wen-Qin3, XU Ming-Xiang1, ZHANG Feng-Ming3, DU You-Wei3 | ||
1Department of Physics, Southeast University, Nanjing 2100962Department of Physics and Institute of Innovations and Advanced Studies (IIAS), National Cheng Kung University, Tainan 7013Jiangsu Provincial Laboratory for Nanotechnology, National Laboratory of Solid State Microstructure, and Department of Physics, Nanjing University, Nanjing 210093 | ||
收稿日期 2009-08-05 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Tabuchi K, Wenas W W, Yamada A, Konagai M and Kakahashi K [2] Zhang W Y, Zhong S, Sun L J and Fu Z X 2008 Chin. [3] Lampe U and Muller J 1989 Sensors Actuators 18 [4] Zhang H J, Zhang X P and Zhao Y G 2009 Chin. Phys. [5] Minami T 2005 Semicond. Sci. Technol. 20 S35 [6] Bhosle V, Tiwari A and Narayan J 2006 Appl. Phys. [7] \"{Ozg\"{ur \"{U, Alivov Ya I, Liu C, Teke A, [8] Yamada T, Miyake A, Kishimoto S, Makino H, Yamamoto N and [9] Bayraktaroglu B, Leedy K and Bedford R 2008 Appl. [10] Chang G S, Kurmaev E Z, Boukhvalov D W, Finkelstein L D, [11] Fortunato E, Assuncao V, Goncalves A, Marques A, Aguas H, [12] Kim J H, Ahn B D, Lee C H, Jeon K A, Kang H S and Lee S Y [13] Cheong K Y, Muti N and Ramanan S R 2002 Thin Solid [14] Ye J D, Gu S L, Zhu S M, Liu S M, Zheng Y D, Zhang R, Shi [15] Ko H J, Chen Y F, Hong S K, Wenisch H, Yao T and Look D C [16] Lu Z L, Hsu H S, Tzeng Y H and Huang J C A 2009 [17] Fons P, Iwata K, Yamada A, Matsubara K, Niki S, Nakahara [18] Mart\'{\inez-Criado G, Segura A, Sans J A, Homs A, [19] Palmer G B and Poeppelmeier K R 2002 Solid State [20] Behan A J, Mokhtari A, Blythe H J, Score D, Xu X H, Neal [21] Mott N F 2001 Adv. Phys. 50 865 [22] Li Z Q and Lin J J 2004 J. Appl. Phys. 96 [23] Pei Z L, Sun C, Tan M H, Xiao J Q, Guan D H, Huang R F [24] Ahn B D, Oh S H, Kim H J, Jung M H and Ko Y G 2007 |
||