2009, Vol. 26(11): 116102-116102    DOI: 10.1088/0256-307X/26/11/116102
Structural and Electrical Properties of Single Crystalline a-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy
LU Zhong-Lin1,2,3, ZOU Wen-Qin3, XU Ming-Xiang1, ZHANG Feng-Ming3, DU You-Wei3
1Department of Physics, Southeast University, Nanjing 2100962Department of Physics and Institute of Innovations and Advanced Studies (IIAS), National Cheng Kung University, Tainan 7013Jiangsu Provincial Laboratory for Nanotechnology, National Laboratory of Solid State Microstructure, and Department of Physics, Nanjing University, Nanjing 210093
收稿日期 2009-08-05  修回日期 1900-01-01
Supporting info

[1] Tabuchi K, Wenas W W, Yamada A, Konagai M and Kakahashi K
1993 Jpn. J. Appl. Phys. 32 3764

[2] Zhang W Y, Zhong S, Sun L J and Fu Z X 2008 Chin.
Phys. Lett. 25 1829

[3] Lampe U and Muller J 1989 Sensors Actuators 18
269

[4] Zhang H J, Zhang X P and Zhao Y G 2009 Chin. Phys.
Lett. 26 077303

[5] Minami T 2005 Semicond. Sci. Technol. 20 S35

[6] Bhosle V, Tiwari A and Narayan J 2006 Appl. Phys.
Lett. 88 032106

[7] \"{Ozg\"{ur \"{U, Alivov Ya I, Liu C, Teke A,
Reshchikov M A, Do\u{gan S, Avrutin V, Cho S J and Morkoc H 2005
J. Appl. Phys. 98 041301

[8] Yamada T, Miyake A, Kishimoto S, Makino H, Yamamoto N and
Yamamoto T 2007 Appl. Phys. Lett. 91 051915

[9] Bayraktaroglu B, Leedy K and Bedford R 2008 Appl.
Phys. Lett. 93 022104

[10] Chang G S, Kurmaev E Z, Boukhvalov D W, Finkelstein L D,
Moewes A, Bieber H, Colis S and Dinia A 2009 J. Phys.: Condens.
Matter 21 056002

[11] Fortunato E, Assuncao V, Goncalves A, Marques A, Aguas H,
Pereira L, Ferreira I, Vilarinho P and Martins R 2004 Thin
Solid Films 451 443

[12] Kim J H, Ahn B D, Lee C H, Jeon K A, Kang H S and Lee S Y
2006 J. Appl. Phys. 100 113515

[13] Cheong K Y, Muti N and Ramanan S R 2002 Thin Solid
Film 410 142

[14] Ye J D, Gu S L, Zhu S M, Liu S M, Zheng Y D, Zhang R, Shi
Y, Xu H Q and Ye Y D 2005 J. Crystal Growth 283 279

[15] Ko H J, Chen Y F, Hong S K, Wenisch H, Yao T and Look D C
2000 Appl. Phys. Lett. 77 3761

[16] Lu Z L, Hsu H S, Tzeng Y H and Huang J C A 2009
Appl. Phys. Lett. 94 152507

[17] Fons P, Iwata K, Yamada A, Matsubara K, Niki S, Nakahara
K, Tanabe T and Takasu H 2000 Appl. Phys. Lett. 77 1801

[18] Mart\'{\inez-Criado G, Segura A, Sans J A, Homs A,
Pellicer-Porres J and Susini J 2006 Appl. Phys. Lett. 89
061906

[19] Palmer G B and Poeppelmeier K R 2002 Solid State
Sci. 4 317

[20] Behan A J, Mokhtari A, Blythe H J, Score D, Xu X H, Neal
J R, Fox A M and Gehring G A 2008 Phys. Rev. Lett. 100
047206

[21] Mott N F 2001 Adv. Phys. 50 865

[22] Li Z Q and Lin J J 2004 J. Appl. Phys. 96
5918

[23] Pei Z L, Sun C, Tan M H, Xiao J Q, Guan D H, Huang R F
and Wen L S 2001 J. Appl. Phys. 90 3432

[24] Ahn B D, Oh S H, Kim H J, Jung M H and Ko Y G 2007
Appl. Phys. Lett. 91 252109