2009, Vol. 26(11): 118101-118101    DOI: 10.1088/0256-307X/26/11/118101
Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling
GONG Yue-Feng1,2, SONG Zhi-Tang1, LING Yun1, LIU Yan, FENG Song-Lin1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academic of Sciences, Beijing 100049
收稿日期 2009-04-06  修回日期 1900-01-01
Supporting info

[1] Mainon J 2003 IEEE Proc. Aerospace Conference (Big
Sky, MT 10--17 March 2001) p 2289

[2] Yi J H et al 2003 IEEE Int. Electron Device Meeting
(Washington DC 8--10 December 2003) p 901

[3] Lai S and Lowrey T 2001 IEEE Int. Electron Devices
Meeting (Washington DC 2--5 December 2001) p 803

[4] Lai S 2003 IEEE Int. Electron Devices Meeting
(Washington DC 8--10 December 2003) p 255

[5] Matsui Y, Kurotsuchi K, Tonomura O, Morikawa T, Kinoshita
M, Fujisaki Y, Matsuzaki N, Hanzawa S, Terao M, Takaura N, Moriya H,
Iwasaki T, Moniwa M and Koga T 2006 IEEE Int. Tech. Dig. Int.
Electron Devices Meet (Tokyo 11--13 December 2006) p 1

[6] Lee S, Choi K, Ryu S, Yoon S, Lee N, Park Y, Kim S, Lee S
and Yu B 2006 Appl. Phys. Lett. 89 053517

[7] Cabral C, Chen K N, Krusin-Elbaum L and Deline V 2007
Appl. Phys. Lett. 90 051908

[8] Song Y J et al 2005 Proc. European Solid State Device
Research Conference (Grenoble, France 12--16 September 2005) p 513

[9] Gong Y F, Ling Y, Song Z T and Feng S L 2008 Chin.
Phys. Lett. 25 3455

[10] Reifenberg J, Pop E, Gibby A, Wong S and Goodson K 2006
IEEE Int. Tenth Intersociety Conference on ITHERM (New York 30
May--2 June 2006) p 106

[11] Senkader S and Wright C D 2004 J. Appl. Phys.
95 504

[12] Lacaita A L 2005 Solid-State Electron. 50 24

[13] Pellizzer F et al 2004 IEEE Int. Symposium on VLSI
Technology, Digest of Technical Papers (Honolulu 15--17 June 2004)
p 18

[14] Kang D H, Ahn D H, Kim K B, Webb J F and Yi K W 2003
J. Appl. Phys. 94 3536

[15] Kim Y T, Hwang Y N, Lee K H, Lee S H, Jeong C W, AHN S J,
Yeung F, Koh G H, Heong H S, Chung W Y, Kim T K, Park Y K, Kim K N
and Kong J T 2005 Jpn. J. Appl. Phys. 44 2701

[16] Kang D H, Kim L H, Jeong J, Cheong B, Ahn D H, Lee D, Kim
H M, Kim K B and Kim S Y 2006 J. Appl. Phys. 100 54506

[17] Yin Y, Sone H and Hosaka S 2006 Jpn. J. Appl. Phys.
45 6177

[18] Morales-S\'{anchez E et al 2005 Thin Solid Films
471 243

[19] Zhang Y, Feng J, Wang H, Cai B and Chen B 2005 Jap.
J. Appl. Phys. 44 1687

[20] Peng C, Cheng L and Mansuripur M 1997 J. Appl.
Phys. 82 4183