[1] Dimitrakopoulos C D and Malenfant P R L 2002 Adv.
Mater. 14 99

[2] Veres J, Ogier S, Lloyd G and de Leeuw D 2004 Chem.
Mater. 16 4543

[3] Yuan J F, Zhang J, Wang J, Yan X J, Yan D H and Xu W 2003
Appl. Phys. Lett. 82 3967

[4] Kelley T W, Boardman L D, Dunbar T D, Muyres D V,
Pellerite M J and Smith T Y P 2003 J. Phys. Chem. B 107
5877

[5] Park S Y, Park M and Lee H H 2004 Appl. Phys. Lett.
85 2283

[6] Muller K, Paloumpa I, Henkel K and Schmeisser D 2005
J. Appl. Phys. 98 056104

[7] Onoue T, Nakamura I, Sakabe Y, Yasuda T and Tsutsui T 2006
Jpn. J. Appl. Phys. I$\!$I 45 L770

[8] Wang W, Shi J W, Guo S X, Zhang H M, Quan B F and Ma D G
2006 Chin. Phys. Lett. 23 3108

[9] Liu P, Wu Y L, Li Y N, Ong B S and Zhu S P 2006 J.
Am. Chem. Soc. 128 4554

[10] Zielke D, Hubler A C, Hahn U, Brandt N, Bartzsch M,
Fugmann U, Fischer T, Veres J and Ogier S 2005 Appl. Phys.
Lett. 87 123508

[11] Jung T, Dodabalapur A, Wenz R and Mohapatra S 2005
Appl. Phys. Lett. 87 182109

[12] Hwang D K, Lee K, Kim J H, Im S, Park J H and Kim E 2006
Appl. Phys. Lett. 89 093507

[13] Sze S M 2001 Semiconductor Devices, Physics and
Technology 2nd edn (New York: Wiley)

[14] Wang Z Y, Kuang L and Gao J P 2003 US Patent
6534250

[15] Sheraw C D, Jia L, Gundlach D J, Klauk H and Jackson T N
2000 42nd EMC (Denver, Colorado, USA)

[16] Wang H, Song D, Yang J, Yu B, Geng Y and Yan D 2007
Appl. Phys. Lett. 90 253510

[17] Klauk H 2006 Organic Electronics: Materials,
Manufacturing and Applications (Weinheim: Wiley)

[18] Lee S, Koo B, Shin J, Lee E, Park H and Kim H 2006
Appl. Phys. Lett. 88 162109

[19] Choi C G and Baez B S 2007 Electrochem. Solid-State
Lett. 10 H347

[20] Nicollian E H and Brews J R 1982 MOS Physics and
Technology (New York: Wiley)

[21] Gu G, Kane M G, Doty J E and Firester A H 2005 Appl.
Phys. Lett. 87 243512

[22] Kim W, Javey A, Vermesh O, Wang O, Li Y M and Dai H J
2003 Nano Lett. 3 193

[23] Chua L L, Zaumseil J, Chang J F, Ou E C W, Ho P K H,
Sirringhaus H and Friend R H 2005 Nature 434 194