2009, Vol. 26(12): 128502-128502 DOI: 10.1088/0256-307X/26/12/128502 | ||
High-Current Multi-Finger Mesa InGaAs/InP DHBTs | ||
JIN Zhi1, CHENG Wei1, SU Yong-Bo1, LIU Xin-Yu1, XU An-Huai2, QI Ming2 | ||
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Laboratory of Functional Materials for Information, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 | ||
收稿日期 2009-03-18 修回日期 1900-01-01 | ||
Supporting info | ||
[1] V. K. Paidi, Z. Griffith, Y. Wei, M. Dahlstrom, M. [2] Wei Y. 2003 PhD thesis (UC Santa Barbara) [3] Kirk C T Jr 1962 IRE Trans. Electron Devices 9 [4] Liu W 1998 Handbook of I$\!$I$\!$I--V Heterojunction [5] Chuang Y, Lai J W, Cimino K, Feng M, Le M, Milano R, [6] Shirokov M S 2000 PhD thesis (Lehigh University) [7] Tanaka S, Amamiya Y, Murakami S, Shimawaki H, GotoN, Takayama Y and Honjo K 1997 Topical Symposium on Millimeter Waves (Kanagawa, Japan 7--8 July 1997) p 27 |
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