| 2010, Vol. 27(1): 17303-017303 DOI: 10.1088/0256-307X/27/1/017303 | ||
| Fabrication and Characterization of C60-Based Organic Schottky Diodes | ||
| CHENG Xiao-Man1,2,3,4, HU Zi-Yang1,2,3, WU Ren-Lei1,2,3, WANG Zhong-Qiang1,2,3, YIN Shou-Gen1,2,3 | ||
| 1Institute of Material Physics, Tianjin University of Technology, Tianjin 3003842Key Laboratory of Display Material and Photoelectric Devices (Ministry of Education), Tianjin University of Technology, Tianjin 3003843Tianjin key Laboratory of Photoelectric Materials and Device, Tianjin 3003844School of Science, Tianjin University of Technology, Tianjin 300384 | ||
| 收稿日期 2009-08-09 修回日期 1900-01-01 | ||
| Supporting info | ||
[1] Sze SM 1981 Physics of Semiconductor Devices (New York: Wiley) [2] Tyagi M S 1991 Introduction to Semiconductor Materials and Devices (New [3] G\"{uler G, G\"{ull\"{u \"{O, Karatas S, Bakkalo\u{glu \"{O F 2009 [4] An X, Fan C H, Huang R, Zhang X 2009 Chin. Phys. Lett. 26 087304 [5] K{\ihco\u{glu T 2008 Thin Solid Films 516 967 [6] Pal B N, Sun J, Jung B J, Choi E, Andreou A G and Katz H E 2008 [7] Steudel S, Myny K, Arkhipov V, Deibel C, Vusser S D, Genoe J and [8] Ma L P, Ouyang J Y and Yang Y 2004 Appl. Phys. Lett. 84 4786 [9] Craciun N I, Wildemand J and Blom P W M 2008 Phys. Rev. Lett. [10] Bullejos P L, Tejada J A J, Deen M J, Marinov O and Datars W R 2008 [11] Kumar P, Jain S C, Misra A, Kamalasanan M N and Kumar V [12] Baude P F, Ender D A, Haase M A, Kelley T W, Muyres D V and Theiss S D [13] Shi Y, Liu J and Yang Y 2000 J. Appl. Phys. 87 4254 [14] Cusumano P, Buttitta F, Cristofalo A D and Cali C 2003 Syn. Met. [15] Cao G H, Qin D S, Guan M, Cao J S, Zeng Y P and Li J M 2008 Chin. Phys. [16] Na J H, Kitamura M and Arakawa Y 2007 Appl. Phys. Lett. [17] Ma L P, Xu Q f and Y Yang 2004 Appl. Phys. Lett. [18] Hayashi N, Ishii H, Ouchi Y and Seki K 2002 J. Appl. Phys. [19] Maxwell A J, Bruhwiler P A, Aruanitis D and Hasselstrom 1998 [20] Tung R T 1992 Phys. Rev. B 45 13509 |
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