2010, Vol. 27(2): 24212-024212    DOI: 10.1088/0256-307X/27/2/024212
High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap
XU Ming1, SHI Wei1,2, HOU Lei1, XUE Hong1, WU Shen-Jiang1, DAI Hui-Ying3
1Department of Applied Physics, Xi'an University of Technology, Xi'an 7100482State key Laboratory of Electrical Insulation for Power Equipment, Xi' an Jiaotong University, Xi' an 7100493Department of Science, Air Force Engineering University, Xi'an 710051
收稿日期 2009-10-10  修回日期 1900-01-01
Supporting info
[1] Shi W and Hou L 2006 Chin. Phys. Lett. 23 2867
[2] Shi W, Jia W L, Hou L, Xu J Z and Zhang X C 2004 Chin. Phys. Lett. 21 1842
[3] Shi W, Chen E Z, Zhang X B and Li Q 2002 Chin. Phys. Lett. 19 1119
[4] Shi W, Dai H Y and Sun X F 2003 Chin. Opt. Lett. 1 553
[5] Shi W and Tian L 2006 Appl. Phys. Lett. 89 202103
[6] Motet T, Nees J, Williamson S and Mourou G 1991 Appl. Phys. Lett. 59 1455
[7] Hendriks J 2005 J. Phys. D: Appl. Phys. 38 2798
[8] Hendriks J 2006 J. Phys. D: Appl. Phys. 39 274
[9] Brussaard G J H and Hendriks J 2007 IEEE Trans. Dielectrics and Electrical Insulation 14 976
[10] Copeland J A 1967 Spectrum IEEE 4 71
[11] Copeland J A 1967 Electronics 40 91
[12] Gun J B 1966 IBM J. Res. 10 310
[13] Shi W and Liang Z X 1999 Chin. J. Semiconduct. 20 53
[14] Tian L and Shi W 2008 Chin. Phys. Lett. 25 2511
[15] Byszewski W W, Enright M J and Proud J M 1982 IEEE Trans. Plasma Sci. 10 281 %DOI: 10.1109/TPS.1982.4316190