2010, Vol. 27(2): 27801-027801    DOI: 10.1088/0256-307X/27/2/027801
	High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy
	JI Hai-Ming1, YANG Tao1, CAO Yu-Lian2, XU Peng-Fei1, GU Yong-Xian1, MA Wen-Quan2, WANG Zhan-Guo1
	1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
	收稿日期 2009-07-06  修回日期 1900-01-01
	Supporting info
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