2010, Vol. 27(3): 38504-038504    DOI: 10.1088/0256-307X/27/3/038504
	Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs
	ZHU Bin1, HAN Qin1, YANG Xiao-Hong1, NI Hai-Qiao2, HE Ji-Fang2, NIU Zhi-Chuan2, WANG Xin1, WANG Xiu-Ping1, WANG Jie1
	1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2State Key Laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
	收稿日期 2009-12-11  修回日期 1900-01-01
	Supporting info
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