2010, Vol. 27(5): 57104-057104    DOI: 10.1088/0256-307X/27/5/057104
Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN
HOU Qi-Feng1, WANG Xiao-Liang1,2, XIAO Hong-Ling1,2, WANG Cui-Mei1,2, YANG Cui-Bai1,2, LI Jin-Min1
1Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 2Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
收稿日期 2010-01-11  修回日期 1900-01-01
Supporting info
[1] Yang L, Hao Y, Ma X H, Quan S, Hu G Z, Jiang S G and Yang L Y 2009 Chin. Phys. Lett. 26 117104
[2] Wu Y F, Moore M, Saxler A, Wisleder T and Parikh P 2006 IEEE Device Research Conference (State College, PA, USA, 26--28 June 2006) 64th p 151
[3] Yang L, Ma J J, Zhu C, Hao Y and Ma X H 2010 Chin. Phys. Lett. 27 027102
[4] Martin G M, Farges J P, Jacob G and Hallais J P 1980 J. Appl. Phys. 51 2840
[5] Arehart A R, Corrion A, Poblenz C, Speck J S, Mishra U K and Ringel S A 2008 Appl. Phys. Lett. 93 112101
[6] Seager C H, Wright A F, Yu J and Götz W 2002 J. Appl. Phys. 92 6553
[7] Xu H Z, Wang Z G, Harrison I, Bell A, Ansell B J, Winser A J, Cheng T S, Foxon C T and Kawabe M 2000 J. Cryst. Growth. 217 228
[8] Newman R and Tyler W W 1954 Phys. Rev. 96 882
[9] Bube R H 1955 Phys. Rev. 99 1105
[10] Bube R H and Lind E L 1958 Phys. Rev. 110 1040
[11] Huang Z C, Mptt D B, Shu P K, Zhang R, Chen J C and Wickenden D K 1997 J. Appl. Phys. 82 2707
[12] Lin T Y, Yang H C and Chen Y F 2000 J. Appl. Phys. 87 3404
[13] Fang C B, Wang X L, Xiao H L, Hu G X, Wang C M, Wang X Y, Li J P, Wang J X, Li C J, Zeng Y P, Li J M and Wang Z G 2007 J. Cryst. Growth 298 800
[14] Cai S, Parish G, Umana-Membreno G A, Dell J M and Nener B D 2004 J. Appl. Phys. 95 1081
[15] Kim N H, Kang T W and Kim T W 2004 J. Mater. Sci. 39 6343
[16] Gorczyca I, Christensen N E and Svane A 2002 Phys. Rev. B 66 075210
[17] Elsner J, Joens R, Heggie M I, Sitch P K, Haugk M, Frauenheim Th, Oberg S and Briddon P R 1998 Phys. Rev. B 58 12571--12574
[18] Neugebauer J and Van de Walle C G 1994 Phys. Rev. B 50 8067--70
[19] Hacke P, Detchprohm T, Hiramatsu K, Sawaki N, Tadatomo K and Miyake K 1994 J. Appl. Phys. 76 304
[20] Götz W, Johnson N M, Amano H and Akasaki I 1994 Appl.Phys. Lett. 65 463
[21] Mattila T, Seitsonen A P and Nieminen R M 1996 Phys. Rev. B 54 1474
[22] Reshchikov M A and Morkoc H 2005 J. Appl. Phys. 97 061301
[23] Lu L, Shen B, Xu F J, Xu J, Gao B, Yang Z J, Zhang G Y, Zhang X P and Yu D P 2007 J. Appl. Phys. 102 033510